t0-220-3l plastic-encapsulate mosfets cjp71n90 n-channel mosfet description the cjp71n90 uses advanced trench technol ogy and design to provide excellent r ds(on) with low gate charge .this device is suitable for use in a wide variety of applications. features z lead free product is acquired z special process technology for high esd capability z high density cell design for ultra low r ds(on) z good stability and uniformity with high e as z excellent package for good heat dissipation application z power switching application z hard switching and high frequency circuits z uninterruptible power supply maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 71 v gate-source voltage v gs 20 v continuous drain current i d 90 a pulsed drain current (note 1) i dm 320 a thermal resistance from junction to ambient (note 2) r ja 62.5 /w junction temperature t j 150 storage temperature t stg -55~+150 to-220-3l 1. gate 2. drain 3. source single pulsed avalanche energy (note 5 ) e as 580 mj 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,dec,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 71 v zero gate voltage drain current i dss v ds =71v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =250a 2 4 v drain-source on-resistance (note 3) r ds(on) v gs =10v, i d =40a 7.5 m ? forward transconductance (note 3) g fs v ds =5v, i d =40a 60 s diode forward voltage (note 3) v sd i s =20a, v gs = 0v 1.2 v dynamic characteristics (note 4) input capacitance c iss 4871 pf output capacitance c oss 630.6 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 410.3 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 0.63 ? switching characteristics (note 4) turn-on delay time t d(on) 36.1 ns turn-on rise time t r 54.3 ns turn-off delay time t d(off) 85.2 ns turn-off fall time t f v gs =10v,v ds =30v, r gen =10
, i d =42a 37.3 ns total gate charge q g 85.7 nc gate-source charge q gs 23.2 nc gate-drain charge q gd v ds =48v,v gs =10v,i d =84a 31.2 nc body diode reverse recovery time (note 3) t rr 88.3 ns body diode reverse recovery charge (note 3) q rr i f =84a,di/dt=100a/s 65.9 nc notes : 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on fr4 board , t ? 10s. 3. pulse test : pulse width ? 300s, duty cycle ? 2%. 4. guaranteed by design, not subject to producting. 5 . l= 0.5 mh, v dd = 37.5 v, v gs =10v,r g =25 ? ,starting t j =25 . 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,dec,2013
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